SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be You may order MSK-110 to

You may order  MSK-110 to seal GA& cell  ( Click Pic below righ )

SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation

8*10-4S/cm

atmospheric stability

SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be You may order MSK-110 toPSpecifications Device Layer Diameter: 6" Type Dopant: N type P doped Orientation: <1 0 0>+ . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer