50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±Ge Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±Ge Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±"> 50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±Ge Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ± – golvvardarna.se

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Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±

$137.43

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50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±">
Description

Pressing Rod Diameter: 28mm ± 0

Application Notes In order to get better film coating

and Lithium Solid-State batteries)

80% (average hole diameter is ~0

Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US Cylindrical Cell Pressing Rod Diameter: 28mm ±Ge Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 0. 5 mm Surface Finish(RMS or Ra): Double side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

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