Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20) never applied pressure more than

never applied pressure more than 2 metric ton or 170 MPa

004mm)                   (Melting Point: ~130ºC) Thickness:             115

BST8-WA is an eight-channel battery analyzer to analyze small coin cells and cylindrical batteries from 0

5mm(D) x 5mm(H)

Ge Single Crystal wafer, N-type undoped (111) 4"x0.5 mm,1sp.R:50 ohm.cm Orientation A-plane(11-20) never applied pressure more thanGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: One side epi polished Surface roughness: < 30 A ( by AFM) Doping: Un Doped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5.