LaAlO3, (110) 5x5x0.5 mm substrate, two sides Epi polished Sieving Systems Inside Dia: 206 mm

Inside Dia:  206 mm

for upper mold insert 12 mm Cutting Dies

an uneven edging excess is expected

Refresh 5 times/S

LaAlO3, (110) 5x5x0.5 mm substrate, two sides Epi polished Sieving Systems Inside Dia: 206 mmSubstrate Specifcations: Wafer Size: 5 x 5 x 0. 5 mm thickness + 0. 05 mm Wafer Orientation: (110) + 0. 5 Deg Polishing: Two sides CMP polished with free sub surface damaged Surface finish (RMS or Ra) : < 15A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792Pseudo cubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which is normal nature .