+ 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2"> InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 This die can be modified – golvvardarna.se

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InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 This die can be modified

$966.00

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Description

This die can be modified into a WIP die ( worm isostatic Pressing ) at the extra cost up to 90oC with heating tape and a programmable temperature controller ( Please click product option bar to order )

Light yield [photons/MeVy]

Size:              10 x 10 x 0

9E4 / cm 2

InSb (111)A 49mm dia x 0.5 mm, Undoped, N type, one side polished Orientation -201 This die can be modified2" InSb wafer (N type, undoped) Size: 49 mm dia x 0. 5mm thick Orientation <111> + 0. 5o with two reference flats Polishing: one side polished ( back side etched ) Packing: Sealed under nitrogen with single wafer container in 1000 class clean room Properties Growth method LEC Orientation (111)A + 0. 5o Orientation Flat Doping Undoped Conductivity type N type Carrier Concentration <1E14 @77K Mobility >2E5 cm^2 V. s EPD <500 cm^ 2

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