Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm Feeders Mobility: 270 cm^2/V

Mobility: 270 cm^2/V

High electrical conductivty

Larger size Mg single crystal wafer upto 2" dia

It comes with two sliding guides which allow you to use the same sample holder as the dip coater

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm Feeders Mobility: 270 cm^2/VThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B dped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" + 0. 5 mm in diameter x 0. 5 mm + 0. 05 mm th Orientation: (100) + 1o Polish: one