99. 99% Density: >80% Size: 2" Dia x 0. 25" Thick Packing: In vacuum bag Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 99. 99% Density: >80% Size: 2" Dia x 0. 25" Thick Packing: In vacuum bag Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> 99. 99% Density: >80% Size: 2" Dia x 0. 25" Thick Packing: In vacuum bag Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater"> La(x)Sr(1-x)CoO3 Target, >99.99% 2" Dia x 0.25" thickness ceramic TGA Conducting type: N Type – golvvardarna.se

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La(x)Sr(1-x)CoO3 Target, >99.99% 2" Dia x 0.25" thickness ceramic TGA Conducting type: N Type

$419.18

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Description

Conducting type: N Type

One Co-axial Nozzle

GaN  Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method

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La(x)Sr(1-x)CoO3 Target, >99.99% 2" Dia x 0.25" thickness ceramic TGA Conducting type: N TypeComposition: La(x)Sr(1 x)CoO3 ceramic Purity: > 99. 99% Density: >80% Size: 2" Dia x 0. 25" Thick Packing: In vacuum bag Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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