Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode CaO+MgO < 0

CaO+MgO < 0

EQ-PCG-2V-LD automatic pressure control system is designed for applications that need controlling constant pressure in a closed system with an in-line flow such as Vacuum Tube Furnaces

003 mm accuracy

0) is included to set various working modes for measuring capacity and lifecycle for all types of rechargeable batteries

Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode CaO+MgO < 0Aluminum Metallic Film Film coated by E beam evaporation under vacuum below 10 6 torr evaporation rate: 0. 2 nanometer per second Aluminum Thickness: 3 microns Film Resistivity: 2. 65 micro ohm cm Film Crystallinity: Weak (111) oriented polycrystals Roughness, RMS: 4. 87 nm and < 10 nm Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0.