Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm active surface area 50 cm2 Orientation: (001) +/-0

Orientation: (001) +/-0

85% Specific heat capacity 836 J/kg · K Linear Thermal Expansion () 10 ~ 12 x 10^-6/K (

(60mm to 1'')

Use anti-rust oil after the operation and store the kit inside the original box in a dry place to avoid rusting

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm active surface area 50 cm2 Orientation: (001) +/-0Thermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >1000 ohm. cm Size: 3"diameter + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers