High Purity Silicon Carbide (SiC) Tube: 85 OD x 75 ID x 1300 L (mm) - TSC85D1300 Pressing Dies Growing Method: CZ

Growing Method:                  CZ

Thickness: 16 um +/- 2um

and order a coolant circulation system at the related product below

5 kg (26 lbs) Shipping Weight 18 kg (40 lbs) / Analyzer only: 25lbs Shipping Dimensions 610mm(H) x 510mm(W) x 356mm(H) (24" x 20" x 14")

High Purity Silicon Carbide (SiC) Tube: 85 OD x 75 ID x 1300 L (mm) - TSC85D1300 Pressing Dies Growing Method: CZSpecifications: Purity: > 98. 5% Temperature (Air): 1700C Max. Density: ? 3. 14kg m3 Thermal Conductivity: 160W (m*K) Thermal Expansion Coefficient: 4. 3K 1*10 6 Dimension: 85 OD x 75 ID x 1300 L (mm) To get a longer tube service life, please use quartz or alumina crucibles to carry the sample, instead of loading the sample directly inside the tube. Please click the picture below to choose one crucible boat: Inspect your delivery: Please check the