US$ 144.00
InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US Orientation 411 CTE (0-300 degree C): 3
$229.43
Description
CTE (0-300 degree C): 3
liquid-vapor may condense and corrode the steel chamber and purification pipeline
Orientation: (110) +/0
mm ( close frame )
InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US Orientation 411 CTE (0-300 degree C): 3Growth method LEC Orientation (100) 0. 5 Deg Doping Undoped Conductivity type N type Carrier Concentration <3E16 cm3 Mobility >20000 cm2 V. S EPD <5E4 cm 2 Standard thickness 500 20 mm Standard diameter 30 mm Polish one side
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