Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm CdS Adjusting the gas flow

Adjusting the gas flow

One needle valve is built-in to control gas flowing rate

Growing Method:            CZ

m 180mm 240m 5kg 280mm 155m 5kg 25

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R>40 Ohm.cm CdS Adjusting the gas flowGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: >40 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A