LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer It is designed to coat

It is designed to coat multi-composition material in one time with high throughput

Thickness: 500um +/- 25 um

Major Flat Orientation:        <110>

Surface Roughness:  < 10A

LaAlO3, (100) orn. 1"x 1" x 0.5mm substrate , 2 side epi polished - LAOa252505S2US Diamond on Silicon wafer It is designed to coatLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 1'' x 1'' x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0.