50 ohm-cm High-Throughput Coating 4 mm x 25Ge Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm High-Throughput Coating 4 mm x 25"> 50 ohm-cm High-Throughput Coating 4 mm x 25Ge Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm High-Throughput Coating 4 mm x 25"> 50 ohm-cm High-Throughput Coating 4 mm x 25Ge Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating 4 mm x 25 – golvvardarna.se

New Arrivals are Here-Fast Shipping from Our USA Warehouse

Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating 4 mm x 25

$125.92

Quantity
50 ohm-cm High-Throughput Coating 4 mm x 25">
Description

4 mm  x  25

EQ-Die-15D-B is a 14

NO pressing powder with particle size LESS THAN 30 micron should be used

lifetime support is provided

Ge Wafer (100)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm High-Throughput Coating 4 mm x 25Ge Wafer Specification Growing Method: CZ Orientation: (100) + 1. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message