F03000 - SEMI F30 - 据付現場における微量ガス不純物およびパーティクルに関する精製器性能テストの始動および検証 Revision:SEMI F30-0710 - Superseded Si wafers for PV applications

Si wafers for PV applications cut from a Si ingot or Si brick by multiple wire sawing contain surface undulations/ripples characteristic for this cutting process

This Test Method determines maximum peak-to-valley of saw marks of multi or single crystal Si wafers that typically run across the entire wafer surface and along the wire direction

NOTICE: This Document was completely rewritten in 2008

本仕様は半導体プロセス装置，すなわち装置本体と，装置のEMO（緊急停止）システムが操作されるとその電力が直接影響を受けるすべてのサブシステムに適用される。

F03000 - SEMI F30 - 据付現場における微量ガス不純物およびパーティクルに関する精製器性能テストの始動および検証 Revision:SEMI F30-0710 - Superseded Si wafers for PV applicationsglobal Gases Interfaces & Carriers Committee2010430global Audits and Reviews Subcommittee20106www. semi. org1998 1001ppm101ppb50LPM Referenced SEMI Standards SEMI F58 Test Method for Determination of Moisture Dry Down Characteristics of Surface Mounted and Conventional Gas Delivery Systems by Atmospheric Pressure Ionization Mass Spectroscopy (APIMS) SEMI F68 Test Method for Determining Purifier Efficiency