MF161700 - SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry StdTpc-Documentation/Training The format and algorithm for

The format and algorithm for the Data Matrix code is based on two-dimensional symbology specified in ISO/IEC 16022

This Test Method  covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 × 1013 carriers/cm3 to about 8 × 1016 carriers/cm3 (resistivity range from about 0

org in November 2016

the test provides a basis for the reliability evaluation of raw material

MF161700 - SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry StdTpc-Documentation/Training The format and algorithm forNOTICE: This Document was reapproved with minor editorial changes. Secondary ion mass spectrometry (SIMS) can measure on polished silicon wafer product the following: the sodium and potassium areal densities that can affect voltage flatband shifts in integrated circuits, and, the aluminum areal density that can affect the thermal oxide growth rate. the iron areal density that can affect gate oxide integrity, minority carrier lifetime, and current